LAM 9400/Processes/mnf nitride1

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About this Process
Process Details
Equipment LAM 9400
Technology RIE
Material Si3N4
Mask Materials PR
Gases Used Ar, O2, SF6
Date Created 2008

mnf_nitride1 is a designed to be selective to SiO2. If only etching Si3N4 with a photoresist mask mnf_oxynit2 may provide better results.


Parameters

Parameter Etch
Pressure 50 mTorr
TCP Power 500 W
Bias Power 25 W
Ar Flow 50 sccm
O2 Flow 20 sccm
SF6 Flow 5 sccm

Capabilities

Etch Rate

Mask Selectivity

Sidewall Profile

Limitations

Qualification