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Technology Details
Technology Thermal processing
Equipment List of Annealing equipment
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Annealing in metallurgy, and material science, is a heat treatment wherein, a material is altered, causing a change in its properties such as strength, and hardness. It is a process that produces conditions by heating, and maintaining a suitable temperature, and then cooling. Annealing is used to induce softness, relieve internal stress, and to refine the structure. From the dictionary: heat (metal or glass) and allow it to cool slowly, in order to remove internal stresses and toughen it.


Tempress S1T1 - Annealing

The Tempress S1T1 furnace tube is a CMOS clean horizontal furnace tube that is used for annealing pieces up to 4" wafers. Maximum temperature is 600°C.

Tempress S3T2 - Annealing

The Tempress S3T2 furnace tube is a CMOS clean horizontal furnace tube that is used for the densification of TEOS films.

Tempress S6T1 - Annealing

The Tempress S6T3 furnace tube is a metals allowed, modular, horizontal furnace tube that is used for annealing pieces up to 6" wafers. Maximum temperature is 1100°C.

Rapid Thermal Annealing

The crystallization of amorphous thin films by annealing can sometimes be greatly aided by rapidly bringing the films up to the annealing temperature, so-called rapid thermal annealing (RTA). RTA can be done in room atmosphere, oxidizing, vacuum, or environment. The reason why RTA is advisable is? how rapid is rapid, etc. we need more

Jetfirst 100/150 RTP

Main article: Jetfirst 100 150 RTP

The Jetfirst RTP 100 and RTP 150 are table-top, lamp-heated Rapid Thermal Process (RTP) tools used for annealing, dopant and silicide drive-in and general thermal processing. They designed for very rapid heating/cooling rates (10-15 C/second) but they alson use banks of halogen lamps that are air-cooled so they are not able to run at high temperatures for sustained amount of time (10-15mins.)

Angstrom Engineering Furnace

The Angstrom Engineering furnace is a metals allowed, annealing/LPCVD furnace tube reactor plumbed with nitrogen (N2), argon (Ar), hydrogen (H2), oxygen (O2), methane (CH4) and acetylene (CxHy). It was designed to operate with one of the three interchangeable setups that allow the use of samples up to six inches in diameter. It can either do atmospheric or low pressure annealing. Maximum temperature is 1000°C.




Main article: Parameter 1



  • Film stress reduction
  • Dopant activation
  • Densification of films
  • Repair damage
  • Alter film to film interface
  • Alter film to substrate interface

Complete tool list

See also

Other related wiki pages


Further reading

  • LNF Tech Talk for Annealing
  • Other stuff, e.g. technology workshop slides
  • External links (can be in another section below, if appropriate)