CMP Strasbaugh 6EC
 Warning: | This system is currently down due to a major failure. There is no ETA |
| CMP Strasbaugh 6EC | |
|---|---|
 Strasbaugh 6ec | |
| Equipment Details | |
| Technology | Polishing |
| Materials Restriction | Metals |
| Material Processed | Dielectrics, some metals |
| Sample Size | 4", 6" and pieces |
| Chemicals Used | Slurries for above materials |
| Equipment Manual | |
| Overview | System Overview[CMP Strasbaugh 6EC#Material_Restrictions|Metals]] |
| Operating Procedure | SOP |
| Supported Processes | Supported Processes |
| Maintenance | Maintenance |
The CMP Strasbaugh 6EC is a single-wafer planarizer designed for the research and development environment. This CMP has both 4" and 6" capabilities, VIPRR wafer carrier, in-situ pad conditioner, and interchangeable platten to accommodate different processes. Standard processes include dielectric planarizing. One of the platens is exclusively dedicated to lapping. Capabilities for lapping/polishing of pieces, thick samples up to 4mm, and III-V materials also exist. Metal polishing capabilities are possible but are not standard processes.
Contents
Announcements
The Strassbaugh 6ec at LNF can be used in several configurations, therefore, before you use it, please create a ticket asking for the configuration you need to be installed. Specify pad type, and wafer size. Give us a few working days to set the tool up, test it, and also prepare the SSEC after CMP cleaner, which also has to be configured appropriately.
A reminder to KOH based slurry users
KOH exposed samples ARE NOT ALLOWED in the clean room unless they go through an exhaustive cleaning process. The simple reason is that K+ ions are highly mobile in silicon. The required cleaning steps and the sequence are as follows:
- Piranha and SC2 ionic clean in Acid 92
- RCA clean (SC1+SC2) in RCA 81
If the next step is a furnace, the sample should be PFC in addition to the steps listed above.
Change in the Silicon Slurry - The Cabot slurry is not available anymore. The Ultra-Sol® 558 is the new slurry that should be used instead. Staff will evaluate this slurry and include removal rates in SOP and wiki.
Chuck Change on a Schedule
The 150mm capability is now available. There is a process available to CMP 150mm wafers. Recipe "3 6in Si test" can be used to CMP Oxide and Nitride when using Slurry 2 and silicon when using slurry 1.
LNF staff will change the chuck and hydro load every three weeks. On September 25 the 150mm chuck was installed.
Capabilities
- Polish and thinning pieces, 4" and 6" wafers
- Standard processes for Si, SiO2
- Up to 3 mm thick samples
- GaAs, polishing capability, or other III-V
- Can collect hazardous waste
- Polish quartz.
- Polish single or double wafers
- Exchangeable platens
- Lapping pad: 3 μm and 5μm
System overview
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Hardware details
- Multiple platens
- Drain diverter that allows polishing and lapping of materials not permitted into waste water stream
- Polishing Pad Rohm and Haas IC1000
- Lapping pad: 3M Trizact (3 micron grit, 6 micron grit available)
- In-situ or ex-situ pad conditioning
- Diamond disk pad conditioner
- VIPPR chuck and hydroload
Substrate requirements
- 4", 6", mounted pieces on carrier
- Carrier can be a blank wafer. The CMP tool is NOT designed to polish pieces. Although mounting them on a 4" or 6" wafers will make it possible, the polishingresults will not be optimal. The surface finish, will be at par with specifications but the overall uniformity will suffer, the edges of the pieces will see a higher polishing rate. You should consider using the lapper to polish (cmp) pieces.
- For mounting suggestions please refer to the Logitech 5PM lapper instructions.
Material restrictions
The CMP Strasbaugh 6EC is designated as a Metals class tool. Below is a list of approved materials for the tool. Approved means the material is allowed in the tool under normal circumstances. If a material is not listed, please create a helpdesk ticket or email info@lnf.umich.edu for any material requests or questions.
This is NOT a CMOS process therefore metals are allowed. In general polymers or surfaces that are not attacked by the available slurries can't be polished. The CMP process is based on a chemical attack by the slurry that softens surface layer and subsequently gets removed by the action of the abrasive in the slurry and the pad. Therefore, diamond-like materials, SiC, Teflon, or metals that are only dissolved in aqua regia cannot be polished.
Supported processes
There are several processes for this tool supported by the LNF, detailed in the table below. If you are curious if your material can be processed in this tool, please contact the tool engineers via the helpdesk ticket system.
Standard operating procedure
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Checkout procedure
- Talk with the Process Engineer if you are thinking of including this technique in your process, this is very important; there are many steps you should take at the mask design level that will make your life easier if you are planning to CMP
- Read through this page and the Standard Operating Procedure above.
- Create a Helpdesk Ticket requesting training.
- A tool engineer will schedule a time for initial training.
- Practice with your mentor, if possible, or another authorized user until you are comfortable with tool operation.
- Schedule a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.
Maintenance
Periodic Maintenance is performed according to the Maintenance Schedule in the Strasbaugh 6EC Operation and Maintenance manual. User maintenance is limited to platen change to use different pads, and carrier film change if necessary. Users must be trained and checked out by tool engineers in order to perform these procedures! Damage to the tool can result from improper performance of these procedures!
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