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|Sample Size||75 to 200 mm wafers|
The FLX-2320-S is a thin-film stress measurement instrument. It calculates film stress by measuring the change in radius of curvature of a substrate caused by the deposition of a thin film on the substrate. This requires measurement of the original substrate radius of curvature (first scan) followed by a second (single) scan to measure curvature with the film of interest deposited on the front of the substrate. The tool is equipped with a hot chuck to study temperature and annealing effects on film stress.
- None at this time.
- Measurement range: 1 MPa to 4 GPa
- Repeatability (on 525 um thick silicon substrate):
- 1 MPa (1σ), +/-3 MPa range for 1 µm film
- 10 MPa (1σ), +/-30 MPa range for 1000 Å film
- 100 MPa (1σ), +/-300 MPa range for 100 Å film
- Minimum radius: 2.0 m for 80 mm scan (100 mm wafer with 10 mm edge exclusion)
- The tool is equipped with two lasers of different wavelengths (670 and 785 nm) to help address potential issues with destructive interference at the detector.
- For best accuracy, the wavelength for first and second (single) scans should be matched to avoid shift in stress reading due to laser mismatch. Mismatch in laser wavelength causes up to 25MPa shift in reading on the calibration check wafers.
- Heated chuck (500°C max and 30°C/minute max heat up ramp rate)
- Contact tool owner through the Helpdesk system for training before running heated measurements.
- Substrate and/or thin film must be reflective.
- Substrate positioning ring diameters: 75, 100, 125, 150, and 200 mm
- A number of substrate materials are available through different process programs. If a process program is not currently available for your substrate material, submit a Helpdesk ticket for tool owner support.
- Wafer thickness should be measured using the height gauge and actual wafer thickness should be entered for your first scans. For a standard 100 mm wafer with 525 um thickness and +/-25 um spec, your stress results can be off by as much as 10% if you assume and enter the nominal 525 um value.
- There are no specific material restrictions for this tool.
- If you are performing heated measurements, the materials need to be stable and not outgas for the temperature you are ramping up to.
- A number of process programs are available for different substrate materials and wafer sizes.
- If a process program is not currently available for your substrate material or wafer size, submit a Helpdesk ticket for tool owner support.
- Users are not authorized to modify or create new process programs or material database entries.
- Positive stress is tensile, negative compressive
Standard Operating Procedure
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- Read through this page and the Standard Operating Procedure above.
- Create a Helpdesk Ticket requesting training.
- A tool engineer will arrange a time for you to schedule a training and checkout session.
Calibration verification wafers are scanned on a monthly basis.