GSI PECVD

GSI PECVD
GSI ULTRADEP 2000 PECVD System
Equipment Details
Technology	PECVD
Materials Restriction	Semi-Clean
Material Processed	SiO2, Si3N4, SiOxNy
Sample Size	100 mm and pieces
Equipment Manual
Overview	System Overview
Operating Procedure	SOP
Supported Processes	Standard Processes
User Processes	User Processes
Maintenance	Maintenance

The GSI ULTRADEP 2000 is a Plasma Enhanced Chemical Vapor Deposition (PECVD) system with standard operating temperatures of 200°C and 400°C. The GSI is configured as a single chamber with a load-lock. This system deposits film only on one side of the substrate at a time. The system is configured to deposit SiO₂, Si₃N₄, and SiO_xN_y on substrates up to 100 mm diameter.

Capabilities

• Standard recipes Oxide 200 and Oxide 350 (actual temp 400°C) are optimized for average refractive index of 1.46 +/-0.006.
• Standard recipes Nitr 200 Conv and Nitr 350 Conv (actual temp 400°C) are optimized for average refractive index of 2.00 +/-0.006.
• Standard recipe Oxynitride 200 LS is optimized for low stress (<60 MPa for >1 um Films)
• Standard recipe Oxide 200 THIN and Oxide 350 THIN (actual temp 400°C) are optimized for minimum porosity of films 1500-5000 angstroms

System Overview

Hardware Details

• Gases
  • Standard Gasbox Mounted MFC's
    • SiH₄ - 300 sccm
    • SiH₄ - 5 sccm
    • NH₃ - 1000 sccm
    • N₂O - 2000 sccm
    • NF₃ - 500 sccm
    • He - 500 sccm
    • N₂ - 1000 sccm
• Pressure
  • Process chamber utilizes Ebara A70W dry pump, butterfly valve, and 10 T Baratron.
  • Load-lock utilizes Alcatel ACP 28G dry pump.
  • Deposition processes operate between 1.5T to 4.5T
• Chuck
  • Heater block 100°C - 350°C (actual substrate temperature is ~15% higher than setpoint)
• RF
  • Comdel dual frequency generator-
    • RF1: 1000 W, 13.56 MHz
    • RF2: 200 W, 420 kHz
  • Advanced Energy Navigator 13.56MHz auto-matching network utilizes variable vacuum capacitors via stepper motors with built-in VI probe at output.
  • 420 kHz impedance matching is accomplished via stand alone fixed match with the center impedance designed for the conjugate load impedance of the standard Nitride processes.

Substrate Requirements

• 100 mm (4") wafers and pieces
• Substrate material:
  • Silicon
  • Quartz
  • Sapphire
  • Glass
  • GaAs
• Aluminum carrier is used for all runs.
• Maximum substrate thickness allowed is <800um (thickness + bow).

Material Restrictions

The GSI PECVD is designated as a Semi-Clean class tool. Below is a list of approved materials for the tool. Approved means the material is allowed in the tool under normal circumstances. If a material is not listed, please create a helpdesk ticket or email info@lnf.umich.edu for any material requests or questions.

Approved materials

Supported Processes

There are several targeted SiO₂ and Si₃N₄ processes supported by the LNF. Characterization data for these processes is captured in the table below, including deposition rate, within wafer non-uniformity percentage, refractive index, and film stress.

Standard Operating Procedure

Widget text will go here.

Checkout Procedure

1. Read through the System Overview and the SOP.
2. Create a Helpdesk Ticket requesting training. Please include information on your desired deposition process (films, thicknesses) and a description of your sample (substrate size, substrate material, and materials already present on your sample). Please verify that your substrate material and materials already present on your sample are listed as approved materials in the Material Restrictions (above) and System Overview section of the User Manual located at the tool.
3. A tool engineer will contact you to coordinate a time for training.
4. One or more of these training sessions with your mentor is recommended and final training session with the tool owner will be required before a checkout session can be arranged to gain authorization on the tool.
5. Request a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.

Maintenance

• Chamber maintenance is performed after every 75 um's of deposition.
• Following chamber maintenance, a monitor wafer is run on one of the LNF supported standard processes (typically Oxide 200 1500 angstroms) to check tool performance and film characteristics.