KMPR

KMPR is an i-line epoxy based photoresist that can be developed in TMAH based developers. It comes in a variety of viscosity and can coat 4-120um thick layers in a single spin. KMPR 1010 can be used to create layers 10-20um thick, and KMPR 1025 can create layers 20-65um thick.

10µm KMPR 1010 Process

We recommend reading through the full datasheet and following their recommendations.

1. Spin in the CEE Apogee @ 3krpm
2. Soft bake 100°C for 5 min
3. Expose
   1. Contact Aligners: 18 sec
   2. Stepper:
4. Bake at 100°C for 2 min
5. Develop
   1. CEE Puddle Developers: 60-60-60 TP

• 

  4µm Line/Space in MA6, 15sec exposure

• 

  4µm Line/Space in MA6, 20sec exposure

Removal

Soaking the sample in Remover PG at 80°C for 10-20min will swell the film and help it delaminate from the substrate. There is also a recipe on the YES that can be used

Equipment

• Spinner CEE Apogee

Technical Data Sheet

• Technical Data Sheet

Safety Data Sheet

• KMPR

References

• Glass Transition Temperature