LAM 9400/Processes/mnf nitride1

From LNF Wiki
Jump to navigation Jump to search

About this Process
Process Details
Equipment LAM 9400
Technology RIE
Material Si3N4
Mask Materials PR
Gases Used Ar, O2, SF6
Date Created 2008

mnf_nitride1 is a designed to be selective to SiO2. If only etching Si3N4 with a photoresist mask mnf_oxynit2 may provide better results.


Parameter Etch
Pressure 50 mTorr
TCP Power 500 W
Bias Power 25 W
Ar Flow 50 sccm
O2 Flow 20 sccm
SF6 Flow 5 sccm


Etch Rate

Mask Selectivity