LAM 9400/Processes/mnf nitride1
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| About this Process | |
|---|---|
| Process Details | |
| Equipment | LAM 9400 |
| Technology | RIE |
| Material | Si3N4 |
| Mask Materials | PR |
| Gases Used | Ar, O2, SF6 |
| Date Created | 2008 |
mnf_nitride1 is a designed to be selective to SiO2. If only etching Si3N4 with a photoresist mask mnf_oxynit2 may provide better results.
Contents
Parameters
| Parameter | Etch |
|---|---|
| Pressure | 50 mTorr |
| TCP Power | 500 W |
| Bias Power | 25 W |
| Ar Flow | 50 sccm |
| O2 Flow | 20 sccm |
| SF6 Flow | 5 sccm |
Capabilities
Etch Rate
Mask Selectivity
- SPR 220: 4000 Å/min
