LAM 9400/Processes/mnf oxide1
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| About this Process | |
|---|---|
| Process Details | |
| Equipment | LAM 9400 |
| Technology | RIE |
| Material | SiO2 |
| Mask Materials | PR |
| Gases Used | Ar, C4F8, He, SF6 |
| Date Created | 2008 |
mnf_oxide 1 is a recipe designed for SiO2 etching in the LAM 9400.
Contents
Parameters
| Parameter | Etch |
|---|---|
| Pressure | 10 mTorr |
| TCP Power | 500 W |
| Bias Power | 100 W |
| Ar Flow | 45 sccm |
| C4F8 Flow | 45 sccm |
| He Flow | 45 sccm |
| SF6 Flow | 7.2 sccm |
Capabilities
Etch Rate
- SiO2 : 1800 Å/min
Mask Selectivity
- SPR 220: 800 Å/min
Sidewall Profile
Limitations
Qualification
Twice a month mnf_oxide1 is run for 120 seconds on a 150 mm oxide wafer.This etch rate is reported in the chart below.
