LAM 9400/Processes/mnf oxide1

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About this Process
Process Details
Equipment LAM 9400
Technology RIE
Material SiO2
Mask Materials PR
Gases Used Ar, C4F8, He, SF6
Date Created 2008

mnf_oxide 1 is a recipe designed for SiO2 etching in the LAM 9400.


Parameter Etch
Pressure 10 mTorr
TCP Power 500 W
Bias Power 100 W
Ar Flow 45 sccm
C4F8 Flow 45 sccm
He Flow 45 sccm
SF6 Flow 7.2 sccm


Etch Rate

Mask Selectivity

Sidewall Profile



Twice a month mnf_oxide1 is run for 120 seconds on a 150 mm oxide wafer.This etch rate is reported in the chart below.