LAM 9400/Processes/mnf oxynite2

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About this Process
Process Details
Equipment LAM 9400
Technology RIE
Material SiO2, Si3N4
Mask Materials PR
Gases Used Ar, C4F8, He, SF6
Date Created 2008

mnf_oxynite2 is a recipe designed to etch both SiO2 and Si3N4 at a similar rate.


Parameter Etch
Pressure 10 mTorr
TCP Power 500 W
Bias Power 100 W
Ar Flow 45 sccm
C4F8 Flow 45 sccm
He Flow 45 sccm
SF6 Flow 13.5 sccm


Etch Rate

Mask Selectivity

Sidewall Profile