LAM 9400/Processes/mnf oxynite2

About this Process
Process Details
Equipment	LAM 9400
Technology	RIE
Material	SiO2, Si3N4
Mask Materials	PR
Gases Used	Ar, C4F8, He, SF6
Date Created	2008

mnf_oxynite2 is a recipe designed to etch both SiO₂ and Si₃N₄ at a similar rate.

Parameters

Parameter	Etch
Pressure	10 mTorr
TCP Power	500 W
Bias Power	100 W
Ar Flow	45 sccm
C4F8 Flow	45 sccm
He Flow	45 sccm
SF6 Flow	13.5 sccm

Capabilities

Etch Rate

• SiO₂ : 1900 Å/min
• Si₃N₄ : 1700 Å/min

Mask Selectivity

• SPR 220: 1700 Å/min