LOR 10A

About this Process
Process Details
Equipment	LOR 10A
Technology	Lift-off

LOR 10A is a lift-off resist polydimethylglutarimide (PMGI) that is desinged for lift-off process and sacrificial release layers. It is used in combination with conventional photo resist to create and undercut or step feature facilitating clean and easy liftoff minimizing, or eliminating stringers and edge roughness. LOR 10A dissolves in Remover PG. Acetone can be used to dissolve the PR layer and do the initial liftoff but Remover PG must be used to remove the LOR 10A. It is always recommended to do a double bath of Remover PG followed by IPA, and then water rinses.

Announcements

Data will be added as it's characterized.

Procedure

Notes

• The thin 3K recipe on the Apogee yields ~0.9um thick LOR 10A film.
• LOR must be spun on the Apogee with the liner with no drain.
• You can spin your PR layer on any spinner.
  • Notes of using the Tel are for spinning the PR layer
• These are all for Si. Other materials will have different reflections and this may impact the required exposures.
• You can spin thicker or thinner but you may need to adjust your develop/exposure time and this will affect your minimum distance between features.

Process

• Spin LOR 10A on Spinner CEE Apogee
  • Thin 3K recipe
• Bake options include: (see characterization data for results)
  • 190°C for 90 sec
  • 170°C for 5 min

Contact Aligners

SPR 220 3.0 process

• Spin SPR 220 3.0
  • 3K thin on Apogee Spinner
  • 3um on Tel
• Bake at 115°C for 90 seconds
• Expose for 7 seconds (see below for exposure matrix)
• Bake a 115°C for 90 seconds
• Develop
  • DP 45-45 726 puddle develop on the CEE developers. (see below for cross sections)

Characterization

• SPR 220 3.0

Contact Alinger, LOR Bake at 190°C, 5min, Spin SPR 220 3.0 3K on Apogee

• exposure vs develop

Stepper, LOR Bake at 190°C, 90 sec, SPR 220 3.0 3um on Tel

• exposure vs develop

Stepper, LOR Bake at 170°C, 5min, SPR 220 3.0 3um Tel

• exposure vs develop

Stepper, LOR Bake at 170°C, 5min, SPR 220 3.0 3um Tel, 50-50 puddle develop

• Size Vs Exposure

After Evaporation, before lift-off, LOR 10A, ~5000Å Al

After Sputter, before lift-off, LOR 10A, ~5000Å Al.

Limitations

The metal should be less than 75% of the thickness of the lift-off resist. For 9000Å of LOR 10A 6, your metal stack should be 6000Å or thinner.