P5000 PECVD

P5000 PECVD
User interface and load station
Equipment Details
Technology	PECVD
Materials Restriction	Semi-Clean
Material Processed	SiO2, Si3N4, a-Si
Sample Size	6" (150mm)
Equipment Manual
Overview	System Overview
Operating Procedure	SOP
Supported Processes	Supported Processes
User Processes	User Processes
Maintenance	Maintenance

The Applied Materials P5000 PECVD system is a multi-chamber Plasma Enhanced Chemical Vapor Deposition (PECVD) tool with standard operating temperatures of 200-400C. Chamber A (not available) is configured for highly conformal TEOS (SiO₂) film deposition, but is not available for processing at this time due to lack of a chemical delivery cabinet. Chamber B is configured for silicon dioxide (SiO₂) and undoped amorphous silicon (a-Si) film deposition. Chamber C is configured to deposit SiO₂, Si₃N₄, and oxynitride (SiO_xN_y) films. Wafers are transferred to the process chambers and are processed one at a time with deposition on only the top side of the substrate.

Announcements

• None at this time

Capabilities

• High deposition rates for oxide, oxynitride and nitride films in the range of ~100-150Å/s.
• Lower processing temperatures (200-400°C) compared with typical furnace deposition temperatures (400-1100°C).

Hardware Details

• Gases/ MFC full range parameters by chamber:
  • Chamber A (not available): NF3 = 1000 sccm, O2 = 600 sccm, C2F6 = 400 sccm, He = 1000 sccm, TEOS = 1.5 g/min (liquid flow meter)
  • Chamber B: H2 = 500 sccm, CF4 = 5000 sccm, N2O = 2000 sccm, SiH4 = 300 sccm, He = 1000 sccm
  • Chamber C: N2O = 200 sccm, N2 = 5000 sccm, NF3 = 1000 sccm, NH3 = 100 sccm, SiH4 = 300 sccm, CF4 = 5000 sccm, N2O = 2000 sccm.
• Pressure Regulation: Closed loop via process chamber 10T baratron pressure gauge and foreline throttle valve
• Single frequency RF – 1000 watts @ 13.56Mhz delivered to chambers through an auto-matching networks.

• Lamp heated for 200-400C process temperatures

Substrate Requirements

• This tool has a cassette load station for 150mm diameter wafers. Processing of 100mm diameter and smaller samples is enabled by use of carrier wafers with a 100mm diameter recessed area. Do NOT use any mounting material (like Crystalbond, Santovac, etc).
• 4" wafers and samples as thick as 1mm have been processed on carrier wafers without issue. Wafers or samples thicker than standard wafer thicknesses will have higher deposition rates and slightly different film parameters than indicated in characterization data.

Material Restrictions

• High Purity Fused Silica wafers are allowed as long as they have been processed through a pre-furnace clean in the old RCA Clean Bench 81 in bay 1440A with an extended 1 minute 10:1 HF etch.
• Only the following metals are allowed as long as they have not been deposited in Lab18-01: aluminum, titanium, molybdenum, tantalum, tungsten, nickel, platinum, and chromium

The P5000 PECVD is designated as a Semi-Clean class tool. Below is a list of approved materials for the tool. Approved means the material is allowed in the tool under normal circumstances. If a material is not listed, please create a helpdesk ticket or email info@lnf.umich.edu for any material requests or questions.

Approved materials

Supported Processes

There are several processes for this tool supported by the LNF. Characterization data for these processes is captured in the table below, including deposition rate, within wafer non-uniformity percentage, refractive index, and film stress. The chamber clean recipe etch rate for the film is also provided which is used when calculating your post deposition chamber clean time.

Additional information on Extended Clean recipes:

Information on film etch rates

At this time, only BHF etch rates for two nitride films have been determined and reported by researchers

Etch rates for nitride in BHF:

• 200C Nitride = 535 A/min
• 400C Tensile Nitride = 215 A/min

Standard Operating Procedure

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Checkout Procedure

1. Read through this page including the System Overview and the Standard Operating Procedure above.
2. Create a Helpdesk Ticket requesting training. Please include information on your desired deposition process (films, thicknesses) and a description of your sample (substrate size, substrate material, and materials already present on your sample). Please verify that your substrate material and materials already present on your sample are listed as approved materials in the System Overview.
3. A tool engineer will contact you to arrange a time for initial training.
4. One or more of these training sessions will be required before a checkout session can be arranged to gain authorization on the tool.
5. Request a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.

Maintenance

• Chamber maintenance is performed on an as needed basis at this time. As tool utilization increases, accumulation limits will be determined for each chamber.
• Following chamber maintenance, a monitor wafer is run on one of the LNF supported standard processes to check tool performance and film characteristics.