P5000 RIE

P5000 RIE
Equipment Details
Manufacturer	Applied Materials
Model	Precision 5000 MxP Etch
Technology	RIE
Materials Restriction	CMOS Clean
Material Processed	SiO2 3800 Å/min Si3N4 Poly-Si 3800 Å/min
Mask Materials	SiO2, PR
Sample Size	150 mm*
Gases Used	varies by chamber
Equipment Manual
Overview	System Overview
Operating Procedure	SOP
Supported Processes	Supported Processes
Maintenance	Maintenance
*Smaller samples may be mounted to a 6" carrier

The Applied Materials P5000 RIE system is a multi-chamber reactive ion etching (RIE) tool. Chambers A and B are configured for Si based dielectric etching, including SiO₂ and Si₃N₄. Chamber C is configured for etching polysilicon and silicon films. The tool has a cassette load station for 150 mm diameter wafers. Processing of 100 mm diameter and smaller samples is possible by mounting samples to 150 mm carrier wafers. Wafers are transferred to the process chambers and are processed one at a time with etching on the top side of the substrate. This system has a single frequency RF power source at 13.56 MHz that is delivered to the chamber through an auto-matching network.

Announcements

Etch rates as of 7/30/2024:

• Chamber B OXIDE_BKM: 3932 A/min +/- 1%, 4% nonuniformity (10mm EE)
• Chamber C POLYPATBKM: 2427 A/min +/- 1%, 3% nonuniformity (10mm EE) on Si

Chamber A is offline indefinitely

Capabilities

Capabilities vary by chamber. Please see individual pages for each chamber.

• Chamber A
• Chamber B
• Chamber C

System Overview

Hardware Details

• Single frequency RF – 1000 Watts @ 13.56 Mhz
• Temperature controlled electrostatic chuck
• Pressure Regulation: Closed loop via process chamber 1 Torr baratron pressure gauge and turbo pump throttle valve

Substrate Requirements

• A 150 mm carrier wafer must be used for 100 mm wafers and smaller pieces. For information on mounting techniques, please read about Sample mounting.
• Thickness: Create a helpdesk ticket for any samples that are thicker than standard wafer thicknesses (675 µm +/-25 µm).
• Substrate surfaces should be clean and free from particulates. Inadequate cleaning of the wafer backside will cause the process to abort and may result in loss of tool authorization.

Material Restrictions

Material restrictions vary by chamber. Generally, Chamber A is designated "Semi-clean", while chambers B and C are "CMOS clean". Please see individual chamber pages for specific restrictions.

• Chamber A
• Chamber B
• Chamber C

Supported Processes

Main article: P5000 RIE/Processes

There are three main characterized processes available for etching SiO₂, Si₃N₄, and polysilicon. More details can be found on the Processes page.

If these processes will not suit your needs and you wish to create a custom recipe, please create a helpdesk ticket for assistance.

For all process questions, fill out the process request form and create a helpdesk ticket.

Standard Operating Procedure

• Standard Operating Procedure

Checkout Procedure

1. Complete the sample mounting course. If you have already completed this for another tool, you do not need to complete it again.
2. Read through this page and the Standard Operating Procedure above.
3. Complete the process request form.
4. Create a Helpdesk Ticket requesting training.
5. A tool engineer will schedule a time for initial training.
6. Practice with your mentor or another authorized user until you are comfortable with tool operation.
7. Schedule a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.

Tool Qualification

Supported processes are tested regularly to verify etch rate and uniformity.