Photoresist is a photoactive polymer suspended in a solvent used in Lithography processing. We have positive novolak based resists for use with our mask aligners and stepper, negative epoxy based resists ..... and e-beam resists for use with the JOEL.
LNF Supported Photoresists
|Name||LNF stock||Positive/Negative||Reversible||Min Thickness (um)||Max Thickness (um)||Exposure type||RIE||Wet Etching||Plating||Lift-off||Comments|
|[SPR 955 (0.9)]||Y||Pos||Y||0.97||0.97||UV||Good||OK||Good||OK||Considered a high resolution resist. The material underneath the resist has a significant impact on the required dose|
|[SPR 220 (3.0)]||Y||Pos||Y||2||5||UV||Good||OK||Good||OK||Not recommended for long wet etches (specially after exposure to plasma)|
|SPR 220 7.0||Y||Pos||Y||6||12||UV||Good||OK||Bad||OK|
|AZ 12XT||N||Pos||N||10||25||UV||Good||Good||OK||OK||This is a chemically enhanced PR.|
|AZ 5214E||N||Pos||Y||1||2||UV||OK||OK||Bad||Good||Image Reversal Resist for High Resolution and intended for lift-off|
|Shipley 1813||Y||Pos||Y||1||1.3||UV||OK||Good||Bad||Good||It must be hard baked for wet etches. It is thin and not good for long wet etches.|
|PMGI SF 6||N||N/A||N/A||0.28||0.68||N/A||Bad||Bad||Bad||Good||This is an LOR resist. The thickness should be at least 1.5x the thickness or metal. Other LOR versions are available for different thicknesses.|
|LOR 10B||N||N/A||N/A||0.9||1.8||N/A||Bad||Bad||Bad||Good||LOR thickness should be at least 1.5x the thickness or metal. Other LOR versions are available for different thicknesses.|
|KMPR 1010||N||Neg||N||10||20||UV||Good||Good||OK||Bad||Resist can swell during metal coating.|
|[KMPR 1025]||N||Neg||N||20||70||UV||Good||Good||OK||Bad||Resist can swell during metal coating.|
|SU-8 2005||N||Neg||N||4||7||UV||Good||Good||OK||Bad||This resist is considered a thick chemically and thermally stable epoxy. Coating only allow in Wet Chemistry. Extremely hard to remove.|
|SU-8 2010||N||Neg||N||10||20||UV||Good||Good||OK||Bad||This resist is considered a thick chemically and thermally stable epoxy. Coating only allow in Wet Chemistry. Extremely hard to remove.|
|SU-8 2050||N||Neg||N||40||170||UV||Good||Good||OK||Bad||This resist is considered a thick chemically and thermally stable epoxy. Coating only allow in Wet Chemistry. Extremely hard to remove.|
|PMMA 950 A2||Y||Pos||N||0.05||0.10||E-beam||OK||OK||Good||Good||It is use for direct writing on the e-beam|
|[PMMA 950 A4]||Y||Pos||N||0.20||0.40||E-beam||OK||OK||Good||Good||It is use for direct writing on the e-beam|
|[PMMA 950 A9]||Y||Pos||N||1.5||2.8||E-beam||OK||OK||Good||Good||It is use for direct writing on the e-beam|
|[PMMA 495 A2]||Y||Pos||N||0.05||0.10||E-beam||Bad||OK||Good||Good||It is use for direct writing on the e-beam|
|[PMMA 495 A4]||Y||Pos||N||0.18||0.30||E-beam||Bad||OK||Good||Good||It is use for direct writing on the e-beam|
|ZEP 520A||N||Pos||N||E-beam||Good||Bad||It is use for direct writing on the e-beam|
LNF stock: This parameter indicates if the resist is supplied by LNF.
Positive/Negative: Positive resist develop the exposed areas, negative resists develope unexposed areas.
Reversible: Some photoresist allowed to have the polarity reverse.
- RIE - Photoresist used in RIE needs to be thermally stable and resistant to the etch chemistry.
- Wet Etch - A photoresists adhesion is very important as any adhesion failure greatly increases undercut.
- Liftoff - Need a photoresist profile that prevents sidewall deposition. Often this is done by using a bi-layer stack and undercutting the bottom layer.
Below you can find a list of public and private approved photoresists for the LNF. If you would like to bring a new photoresist into the robin lab or clean room, then please create a help desk ticket or email firstname.lastname@example.org. All photoresists must be handled using the green polychloroprene gloves.