Plasmatherm 790/Processes/L O2 DSM

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L_O2_DSM is an O2 etch designed for photoresist descumming.

About this Process
Process Details
Equipment Plasmatherm 790
Technology RIE
Material SPR 220
Gases Used O2


Parameter Etch
RF Power 50 W
Pressure 200 mTorr
O2 Flow 75 sccm


Etch Rate

Mask Selectivity

  • Si Etch Rate: <5 Å/min
  • SiO2 Etch Rate: <5 Å/min