Plasmatherm 790/Processes/L nit200
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l_nit200 is a lower temp nitride deposition recipe for the Plasmatherm 790. It is optimized to have a stress near 25 MPa and an index of 2.0.
| About this Process | |
|---|---|
| Process Details | |
| Equipment | Plasmatherm 790 |
| Technology | PECVD |
| Material | Si3N4 |
| Gases Used | SiH4, NH3, N2, He |
Capabilities
| Parameter | |
|---|---|
| Deposition Rate | 34.1 nm/min |
| Index of Refraction | 1.998 |
| Stress | 25 MPa |
Qualification is done with a 5 minute run, max allowed thickness of 2µm.
Parameters
| Parameter | Dep |
|---|---|
| RF Power | 150 W |
| Pressure | 1500 mTorr |
| NH3 Flow | 1.2 sccm |
| N2 Flow | 200 sccm |
| He Flow | 490 sccm |
| SiH4 Flow | 5 sccm |
| Temperature | 200°C |
