Plasmatherm 790/Processes/L ox350

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l_ox350 is a higher temp oxide deposition recipe for the Plasmatherm 790.

About this Process
Process Details
Equipment Plasmatherm 790
Technology PECVD
Material SiO2
Gases Used SiH4, N2O, He


Deposition Rate 44.5 nm/min
Index of Refraction 1.467
Stress -420 MPa

Qualification is done with a 5 minute run, max allowed thickness of 2µm.


Parameter Dep
RF Power 75 W
Pressure 900 mTorr
SiH4 Flow 3.0 sccm
N2O Flow 200 sccm
He Flow 100 sccm
Temperature 350°C