Plasmatherm 790/Processes/L ox350R
< Plasmatherm 790 | Processes
Jump to navigation
Jump to search
L_OX350R is a 350 C oxide deposition recipe designed to reduce the film roughness by increasing the power. Currently more characterization is needed but roughness as low as 0.23 nm have been seen.
About this Process | |
---|---|
Process Details | |
Equipment | Plasmatherm 790 |
Technology | PECVD |
Material | SiO2 |
Gases Used | SiH4, N2O, He |
Capabilities
Parameter | |
---|---|
Deposition Rate | 6.5 Å/sec |
Index of Refraction | ? |
Stress | ? MPa |
Qualification is done with a 5 minute run, max allowed thickness of 2µm. Once you have deposited 2um of oxide, you must run a clean process to "reset" the chamber.
Parameters
Parameter | Dep |
---|---|
RF Power | 150 W |
Pressure | 900 mTorr |
SiH4 Flow | 3.0 sccm |
N2O Flow | 200 sccm |
He Flow | 100 sccm |
Temperature | 350°C |