Plasmatherm 790/Processes/L ox350R
< Plasmatherm 790 | Processes
Jump to navigation
Jump to search
L_OX350R is a 350 C oxide deposition recipe designed to reduce the film roughness by increasing the power. Currently more characterization is needed but roughness as low as 0.23 nm have been seen.
| About this Process | |
|---|---|
| Process Details | |
| Equipment | Plasmatherm 790 |
| Technology | PECVD |
| Material | SiO2 |
| Gases Used | SiH4, N2O, He |
Capabilities
| Parameter | |
|---|---|
| Deposition Rate | 6.5 Å/sec |
| Index of Refraction | ? |
| Stress | ? MPa |
Qualification is done with a 5 minute run, max allowed thickness of 2µm. Once you have deposited 2um of oxide, you must run a clean process to "reset" the chamber.
Parameters
| Parameter | Dep |
|---|---|
| RF Power | 150 W |
| Pressure | 900 mTorr |
| SiH4 Flow | 3.0 sccm |
| N2O Flow | 200 sccm |
| He Flow | 100 sccm |
| Temperature | 350°C |
