Plasmatherm 790/Processes/m si o 1

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This is a basic oxide etch with a relatively slow etch rate.

About this Process
Process Details
Equipment	Plasmatherm 790
Technology	RIE
Material	SiO₂
Mask Materials	PR
Gases Used	CHF₃, CF₄

Contents

1 Parameters
2 Capabilities
- 2.1 Etch Rate
- 2.2 Mask Selectivity
3 Limitations

Parameters

Parameter	Etch
RF Power	150 W
Pressure	20 mTorr
CF₄ Flow	15 sccm
CHF₃ Flow	15 sccm

Capabilities

Etch Rate

SiO2 Etch Rate
- Thermal oxide/HTO: 190 Å/min
- Plasmatherm 790 L_OX200: 238 Å/min

Mask Selectivity

Photoresist Etch Rate
- SPR 220: 100 Å/min

Limitations

The limitations for this recipe are still being defined.

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