SPR 220

SPR 220 is our most commonly used photoresist, especially for RIE. The lab stocks SPR 220 (3.0) for general use, in the TEL Mark Vz Coater, and in the CEE 200X #1 & #2. For films thicker then 5µm, AZ 12XT is also available from the LNF Store.

3µm - SPR 220 (3.0)

Process

1. Dehydrate and apply HMDS
2. Spin
   • TEL - SPR 220 3.0 3um recipe
   • CEE 200X PR Spinner 1,2 - SPR 220 3.0 3um recipe
3. Bake 115°C for 90 sec
4. Wait ≥5 min
5. Expose
   • Stepper
     • Silicon - 0.40 sec
     • Aluminum (~90% reflection) - 0.34 sec
   • Aligner - 9 sec (silicon)
6. Wait ≥3 min
7. Bake 115°C for 90 sec
8. Develop
   • TEL - AZ726 - DP3030
   • CEE - AZ726 DP 30-30

Characterization

Stepper

Minimum Feature Size
Grating	700 nm
Line	??
Trench	1 µm
Hole	??
Pillar	?? nm

Gratings with equal duty cycle.

Free standing trenches.

Free standing lines.

1. TODO

Holes

1. TODO

Pillars

1. TODO

Focus should be kept at 0.

Puddle vs Spray Develop

1. TODO

Spray develop time:

Contact Aligner

~2µm minimum feature size, but this is partially limited by the mask maker.

5µm of SPR 220 (3.0)

Process

1. Dehydrate and apply HMDS
   
2. Spin
   
   • TEL Mark Vz Coater - SPR 220 3.0 5um recipe
   • CEE 200X PR Spinner 1,2 - SPR 220 3.0 5um recipe
3. Bake 2 minutes (120 seconds) at 115°C with a 30 second stepdown
   
4. Wait ≥ ?? min
   
5. Expose
   
   • Stepper
     
     • Silicon - 0.75 seconds
       
     • Aluminum (~90% reflection) - ??
       
     • ~15% reflection - ??
       
   • Aligner -11 sec (silicon)
     
6. Wait ≥ ?? min
   
7. Bake 115°C for 90 sec
   
8. Develop
   
   • TEL - AZ726 - 50-50DP
     
   • CEE - AZ726 - 50-50DP
     

Technical Data Sheet

• Data Sheet