STS APS DGRIE/Processes

The primary recipes for the STS APS DGRIE are used for deep oxide/quartz/silica etching. The uk submicron etch is designed for thin-film (up to 8 μm) etching of oxide. Feature sizes can range from 100 nm to a full wafer. The Fused Silica Etch is designed for deep etching of fused silica, quartz, and glass.

Process List

• uk_submicron etch

  Standard thin film oxide etch, ~2600Å/min

• Fused Silica Etch

  Deep glass/fused silica etching, ~5000Å/min

• LNF_Polymer

  For etching polymers like polyimide ~920nm/min

• dachuanw_Si3N4_1
• dachuanw_Si3N4_2
• O2_Slow

  This recipe was setup to etch a bottom anti-reflective layer