STS APS DGRIE/Processes
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The primary recipes for the STS APS DGRIE are used for deep oxide/quartz/silica etching. The uk submicron etch is designed for thin-film (up to 8 μm) etching of oxide. Feature sizes can range from 100 nm to a full wafer. The Fused Silica Etch is designed for deep etching of fused silica, quartz, and glass.
- uk_submicron etch
- Standard thin film oxide etch, ~2600Å/min
- Fused Silica Etch
- Deep glass/fused silica etching, ~5000Å/min
- For etching polymers like polyimide ~920nm/min