STS APS DGRIE/Processes/LNF Polymer
|About this Process|
|Equipment||STS APS DGRIE|
|Mask Materials||Photoresist, SiO2, Aluminum|
|Gases Used||O2, He|
|Date Created||October 2020|
|Authored By||Shawn Wright & Kevin Owen|
Follow the instructions in the tool operating procedure and select LNF Polymer from the supported processes folder.
|ICP Power||2000 W|
|Bias Power||30 W|
|O2 Flow||90 sccm|
|He Flow||100 sccm|
- Polyimide: 920 nm/min
- SPR 220: 963 nm/min
- Parylene: 1.3 µm/min (user reported)
- Platinum: ~1.5 nm/min
- SiO2: 28 nm/min
- Aluminum: < 2 nm/min (varies with etch time; e.g. 30 sec or less is higher, ~4 nm/min) (user reported)
Oxygen plasmas are predominantly isotropic; the specific isotropy ratio has not been measured for this process. Standard photoresist masks are not recommended, since they are polymers and will also etch quickly with this process. However, there are limitations to what type of hard mask is acceptable, so please create a helpdesk ticket to discuss your process with a tool engineer.
None at this time.