STS APS DGRIE/Processes/dachuanw Si3N4 1

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About this Process
Process Details
Equipment STS APS DGRIE
Technology RIE
Material Si3N4
Mask Materials Photoresist, aSi
Gases Used C4F8, CF4, H2, He

dachuanw Si3N4 1 is for etching Si3N4. This recipe has a higher selectivity then dachuanw_Si3N4_2.

Parameters

Parameter Main Etch
Pressure 4 mTorr
ICP Power 1400 W
Bias Power 150 W
C4F8 Flow 10 sccm
CF4 Flow 20 sccm
H2 Flow 30 sccm
He Flow 174 sccm

Characterization

Etch Rates

  • Si3N4 (stoichiometric):
  • Si3N4 (low-stress/Si-rich): 145 nm/min
  • SPR 220: 120 nm/min
  • ZEP: 156 nm/min
  • SiO2: 259 nm/min

Profile

The etch profiles below were from a 180sec etch of a piece with ~720nm of Stoichiometric nitride, a SPR 955 0.97µm mask, mounted to a Si carrier.

  • 500nm Line

  • 500nm Line/Space

  • Sidewall

Qualification

None at this time.

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