STS APS DGRIE/Processes/dachuanw Si3N4 2
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| About this Process | |
|---|---|
| Process Details | |
| Equipment | STS APS DGRIE |
| Technology | RIE |
| Material | Si3N4 |
| Mask Materials | Photoresist, aSi |
| Gases Used | CF4, He |
dachuanw Si3N4 2 is for etching Si3N4. This recipe has a more vertical profile then dachuanw_Si3N4_1.
Parameters
| Parameter | Main Etch |
|---|---|
| Pressure | 4 mTorr |
| ICP Power | 1400 W |
| Bias Power | 150 W |
| CF4 Flow | 40 sccm |
| He Flow | 174 sccm |
Characterization
Etch Rates
(Measured as piece mounted to Si carrier)
- Si3N4 (stoichiometric): 240 nm/min
- Si3N4 (low-stress/Si-rich): 204 nm/min
- Si3N4 (P5000 200C): 337 nm/min
- Nonuniformity: ± 1.0%
- SPR 220: 252 nm/min
- ZEP: 324 nm/min
- SiO2: 301 nm/min
- Si: 206 nm/min
Profile
The etch profiles below were from a 180sec etch of a piece with ~720nm of Stoichiometric nitride, a SPR 955 0.97µm mask, mounted to a Si carrier.
1000nm Line/Space
500nm Line/Space
250nm Line, Resist Stripped
Sidewall
Qualification
None at this time.
