STS Pegasus 4/Processes/LNF Ar Descum
< STS Pegasus 4 | ProcessesJump to navigation Jump to search
|About this Process|
|Equipment||STS Pegasus 4|
|Authored By||Kevin Owen|
LNF Ar Descum uses an Ar plasma to anisotropically and indiscriminately remove a thin layer of any material on the surface of the sample. It is intended as a combination of photoresist descum and native oxide removal prior to Si etching. This recipe is already included in all of the standard recipes.
LNF Ar Descum is included as the first process step in all standard processes, so it is not typically necessary to run as a standalone process.
The maximum etch time allowed for this process is 2 minutes.
|Bias Power (LF)||W||80|
Etch rate and uniformity
All of the etch rates below (with the exception of photoresist) are characterized using LPCVD or thermal furnace films.
|Silicon dioxide||100 Å/min||13%|
|Silicon nitride||110 Å/min||11%|
|Low stress nitride||115 Å/min||10%|
|SPR 220||190 Å/min||8%|
This recipe is intended for blanket descum of the wafer surface, so a mask is not necessary.
Maximum allowed etch time is 2 min.