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Plasma etching

448 bytes added, 6 years ago
===Sample temperature===
Some plasma etching systems allow for the temperature of the sample to be controlled. For most processes, the sample is kept between 20-50°C and are actively cooled to prevent damage to the mask, which is often [[photoresist]]. A liquid nitrogen cooled chuck, such as on the [[Oxford ICP RIE]] can be used to perform [[cryogenic etching]]. Also, some etch processes (e.g. [[polymer]] etching) benefit from a heated chuck (can be up to 200°C).
==Reactive ion etching==
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