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LAM 9400/Processes/LNF Poly

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[[Category:Processes]] [[Category:RIE]]
LNF_Poly is designed for etching si [[Silicon|Si]] and polysilicon [[Polysilicon]] in the LAM 9400. This recipe is currently under development produces a very vertical sidewall angle and will replace poly_etch_2 as it does not have the same stability problemshas a high selectively to oxide (~18:1).
==Etch Rates==
* Polysilicon - 2340 Å/min (blanket 150mm poly)
*Si - 2800 Å/min (<10% open area)
*SPR 220 (3.0) - 275 Å/min
*SiO<sub>2</sub> - 150 Å/min
 
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==Parameters==
! Parameter
! Breakthrough
! Main Etch|-| Time| 10 sec| variable
|-
| Pressure| 100 5 mTorr| 12 30 mTorr
|-
| TCP Power
| 300 W
| 500 600 W
|-
| Bias Power
| 50 100 W| 30 90 W
|-
| Cl<sub>2</sub> Flow
| 100 60 sccm
| 0 sccm
|-
| C<sub>4</sub>F<sub>8</sub> HBr Flow
| 0 sccm
| 100 sccm
|-
| He Flow
| 0 sccm
| 100 sccm
|-
| HBr
| 0 sccm
| 100 sccm
|}
==CapabilitiesSidewall Profile=====Etch Rate=== ===Mask Selectivity===* Nearly a 90 degree sidewall angle
<gallery mode="packed-hover" heights==Sidewall Profile==="300px">[[File:LAM_9400_LNF_Poly_2um_grating.jpg|400px]]LNF_Poly for 600 sec, 2 µm gratingFile:LAM_9400_LNF_Poly_10um_grating.jpg|LNF_Poly for 600 sec, 10 µm grating</gallery>
==Limitations==
To remove the photoresist a ~20 sec dip in 100:1 HF is necessary before nanostrip.
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