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LAM 9400/Processes/LNF Poly

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[[Category:Processes]] [[Category:RIE]]
LNF_Poly is designed for etching si [[Silicon|Si]] and polysilicon [[Polysilicon]] in the LAM 9400. This recipe is currently under development produces a very vertical sidewall angle and will replace poly_etch_2 as it does not have the same stability problemshas a high selectively to oxide (~18:1).
==Etch Rates==
* Polysilicon - 2340 Å/min (blanket 150mm poly)
*Si - 2800 Å/min (<10% open area)
*SPR 220 (3.0) - 275 Å/min
*SiO<sub>2</sub> - 150 Å/min
! Main Etch
| Time| 10 sec| variable|-| Pressure
| 5 mTorr
| 30 mTorr
==CapabilitiesSidewall Profile=====Etch Rate=== ===Mask Selectivity===* Nearly a 90 degree sidewall angle
<gallery mode="packed-hover" heights==Sidewall Profile==="300px">[[File:LAM_9400_LNF_Poly_2um_grating.jpg|400px]]LNF_Poly for 600 sec, 2 µm gratingFile:LAM_9400_LNF_Poly_10um_grating.jpg|LNF_Poly for 600 sec, 10 µm grating</gallery>
To remove the photoresist a ~20 sec dip in 100:1 HF is necessary before nanostrip.
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