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Sputter deposition

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==Figures of Merit==
The figures of merit are described in the generic [[Physical vapor deposition PVD]] page
===UniformityResponses of Figures of Merit with Parameter changes===Uniformity measures the variation in thickness across a substrate and is usually expressed as a percentage. Typically: (Thickness Max - Thickness Min)/Thickness Average. Uniformity is typically set by the material being deposited and the geometry of the system: throw distance, substrate rotation and deposition angle.*In sputtering, uniformity is determined by throw distance and the shape of the deposition **In the Denton and Lab 18 tools, smaller sources eject material from the face of a 3" target that is angled to cover around 1/2 of the substrate area. The substrate is rotated to coat the entire area. Varying the angle will vary the throw distance and change the amount deposited on the center and edge. The supplies have a set throw angle that is optimized for best uniformity.**In the ALN tool, the wafer is centered over two targets which are larger than the substrate. Uniformity can be only be adjusted using the DC supply which raises and lowers the power to the center target.   ====Deposition Rate, Stress, Resistivity and Step Coverage====
Although many films (especially reactive films and insulating compounds) may vary in their response, typical sputtering variables can be summarized in this trend chart:
Sputter Process Trend Chart.jpg
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====Uniformity====
Uniformity is set by the material being deposited and the geometry of the system: throw distance, target size, substrate rotation and deposition angle.
*In sputtering, uniformity is determined by throw distance and the shape of the deposition cone.
**In the Denton and Lab 18 tools, smaller sources eject material from the face of a 3" target that is angled to cover around 1/2 of the substrate area. The substrate is rotated to coat the entire area. Varying the angle will vary the throw distance and change the amount deposited on the center and edge. The supplies have a set throw angle that is optimized for best uniformity.
**In the ALN tool, the wafer is centered over two targets which are larger than the substrate. Uniformity can be only be adjusted using the DC supply which raises and lowers the power to the center target.
==LNF Capabilities==
LabUser, OnlineAccess, PhysicalAccess, Staff, StoreManager, StoreUser
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