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LAM 9400/Processes/LNF Poly

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[[Category:Processes]] [[Category:RIE]]
LNF_Poly is designed for etching si [[Silicon|Si]] and polysilicon [[Polysilicon]] in the LAM 9400. This recipe is currently under development produces a very vertical sidewall angle and will replace poly_etch_2 as it does not have the same stability problemshas a high selectively to oxide (~18:1).
==Etch Rates==
==Limitations==
This process should not be run below 25 mTorr since the tool has difficulty stabilizing a pure HBr process in that pressure regime.
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