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LAM 9400/Processes/LNF Poly

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==Etch Rates==
* Polysilicon - 2340 Å/min (blanket 150mm poly)*Si - 2800 Å/min(<10% open area)
*SPR 220 (3.0) - 275 Å/min
*SiO<sub>2</sub> - 150 Å/min
This process should not be run below 25 mTorr since To remove the tool has difficulty stabilizing photoresist a pure HBr process ~20 sec dip in that pressure regime100:1 HF is necessary before nanostrip.
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