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Sputter deposition

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<!-- Set the Material Restriction Level: 1 = CMOS Clean, 2 = Semi-Clean, 3 = Metals -->
{{infobox equipmenttechnology
|image = Sputter Deposition.png
|caption =
|materials = [[Silver|Ag]], [[Aluminum|Al]], [[Aluminum oxide|Al2O3]], [[Gold|Au]], [[Chromium|Cr]], [[Copper|Cu]], [[Iron|Fe]], [[Germanium|Ge]], [[Nickel|Ni]], [[Platinum|Pt]], [[Silicon dioxide|SiO2]], [[Titanium|Ti]], [[Titanium dioxide|TiO2]], [[Zinc|Zn]]
|mask =|size = 6", 4", 3" and 2" wafers, Pieces|chemicals =|gases = Ar, N2, O2 1%, O2 0.1%|overview = [[Wikipedia:Sputter_deposition|General Overview: Wikipedia Sputter Deposition]]|sop = |processes = |maintenance technology = PVD
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[[Wikipedia:Sputter_deposition|Sputter Deposition{{PAGENAME}}]] is a [[physical vapor deposition (PVD) ]] method of thin film deposition in which a high-purity source material (called a cathode or target) is subjected to a gas plasma (typically Ar[[argon]]).) The energetic atoms in this gas plasma collide with the target material and knock off source atoms which then travel to the substrate and condense into a thin film.
==Method of operation=={{expand section}}  ==Applications=={{expand section}} ==Figures of Meritmerit=={{cleanup|section|reason=the subsection headings are wordy and there is a lot more depth than necessary}}
The figures of merit are described in the generic [[Physical vapor deposition | PVD]] page
===Responses of Figures figures of Merit merit with Parameter parameter changes===
====Deposition Rate, Stress, Resistivity and Step Coverage====
Although many films (especially reactive films and insulating compounds) may vary in their response, typical sputtering variables can be summarized in this trend chart:
**In the ALN tool, the wafer is centered over two targets which are larger than the substrate. Uniformity can be only be adjusted using the DC supply which raises and lowers the power to the center target.
==LNF CapabilitiesMaterials==<!--A more general description of what The following materials can be deposited using Magnetron{{clarify}} sputter deposition at the tool is capable of doingLNF.-->*[[Aluminum|Aluminum(Al)]]*[[Aluminum oxide|Aluminum oxide(Al2O3)]]*[[Chromium|Chromium(Cr)]]*[[Copper|Copper(Cu)]]*[[Gold|Gold (Au)]]*[[Germanium|Germanium(Ge)]]*[[Iron|Iron(Fe)]]*[[Nickel|Nickel (Ni)]]*[[Platinum|Platinum(Pt)]]*[[Silicon dioxide|Silicon dioxide(SiO2)]]*[[Silicon nitride|Silicon nitride(SiN)]]*[[Silver|Silver(Ag)]]*[[Titanium|Titanium(Ti)]]*[[Titanium dioxide|Titanium dioxide(TiO2)]]*[[Zinc|Zinc(Zn)]] ==Equipment==The LNF has 4 Sputter Deposition Toolssputter deposition tools
** [[Lab 18-1|Lab 18-1]]
** [[Lab 18-2|Lab 18-2]]
** [[AMS 2004 Aluminum Nitride Sputter Tool|AMS 2004 Aluminum Nitride Sputter Tool]]
** [[Denton Explorer-14|Denton Explorer-14]]
*The following materials can be deposited using Magnetron Sputter Deposition.
**[[Aluminum oxide|Aluminum oxide(Al2O3)]]
**[[Gold|Gold (Au)]]
**[[Nickel|Nickel (Ni)]]
**[[Silicon dioxide|Silicon dioxide(SiO2)]]
**[[Silicon nitride|Silicon nitride(SiN)]]
**[[Titanium dioxide|Titanium dioxide(TiO2)]]
===Lab 18-1===
*The AMS tool is designed specifically for Piezoelectric AlN on 4" wafers. It is a high temperature process that works only on certain substrates with specific seeding matetrials and the handler is only designed for 4" wafers are this time.
==See also==
* [[Physical vapor deposition]]
* [[Deposition]]
* [[:Category:PVD equipment|List of PVD equipment]]
<references />
==Further reading==
*[[Wikipedia:Sputter_deposition|General Overview: Wikipedia Sputter Deposition]]
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