Changes

Jump to navigation Jump to search

Deposition

7 bytes removed, 6 years ago
no edit summary
! style="font-weight: bold;" | Primarily Used for:
|-
| Thermal Evaporation| Low Melting Point metals and materials| 1-10 Å/sec| 10-100ºC| Highly directional - no sidewall coverage| Poor| High| Poor| 10-100nm| Liftoff metal deposition especially e-beam resists|-| E-beam [[Evaporation]]
| Metals and Dielectrics
| 1-15 Å/sec
| Liftoff or thicker metal deposition
|-
| Sputtering[[Sputter Deposition]]
| Metals and dielectrics
| 0.1-10 Å/sec
| More conformal metal and dielectric thin film deposition. Compounds that do not evaporate while keeping stoichiomettry
|-
| [[Plasma enhanced chemical vapor deposition| Plasma Enhanced CVD (PECVD)]]
| Mainly Dielectrics
| 5-200Å/sec
| Lower temp oxide/nitride deposition
|-
| [[Low pressure chemical vapor deposition| Low Pressure CVD (LPCVD)]]
| Mainly Dielectrics
| 10-100 Å/sec
| Better quality oxide/nitride dep where substrate can handle higher temp
|-
| [[Electroplating| ECD/Plating]]
| Conductive Materials
| Depends on process
| Thicker films deposition with good conformality
|-
| [[Atomic layer deposition|Atomic Layer Deposition (ALD)]]
| Metals, metal oxides and nitrides
| ~1Å/ cycle.
LabUser, OnlineAccess, PhysicalAccess, Staff, StoreManager, StoreUser
904

edits

Navigation menu