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[[{{PAGENAME}}]] or Growth refers to the controlled synthesis, growth , or transfer of materials as thin films on a substrate. A thin film is a layer of material ranging from fractions of a nanometer (monolayer) to several micrometers in thickness. Based on the growth dynamics which prevail during the deposition, the resulting material can be amorphous, polycrystalline, or crystalline. Deposition techniques that result in crystalline material are often referred to as epitaxial growth.
Typical technologies include atomic layer deposition (ALD), chemical vapor deposition (CVD), electrodeposition/ electroplating or electrochemical deposition (ECD), and physical vapor deposition (PVD) , and molecular beam epitaxy (MBE). Selection of deposition technique depends on material deposited, desired film characteristics , and substrate temperature tolerance:
{| class="wikitablesortable"! style="font-weight: bold;" | Deposition Method! style="font-weight: bold;" | Materials! style="font-weight: bold;" | Deposition Rate! style="font-weight: bold;" | Substrate Temperature! style="font-weight: bold;" | ConfomalityConformality / Sidewall Coverage! style="font-weight: bold;" | Film Density! style="font-weight: bold;" | Impurity Levels! style="font-weight: bold;" | Uniformity! style="font-weight: bold;" | Grain Size! style="font-weight: bold;" | Primarily Used for:
| [[Evaporation]]| Metals and Dielectrics| 1-{{ndash}}15 {{nbsp}}Å/sec| 10-{{ndash}}100ºCfrom dep. 300ºC with heater| Highly directional - no sidewall coveragePoor{{ndash}}None| Poor| Low| Poor| 10-100nm{{ndash}}100{{nbsp}}nm| Liftoff or thicker Thicker blanket metal depositionfilms. Low substrate temp. Directionality means it works well with lift-off patterning
| [[Sputter Depositiondeposition]]| Metals and dielectrics| 0.1-{{ndash}}10 {{nbsp}}Å/sec| 50-{{ndash}}300ºC| Some sidewall coverageOK| Good| Low| Good| ~10nm5{{ndash}}20{{nbsp}}nm| More conformal metal and dielectric thin film deposition. Compounds that do not evaporate while keeping stoichiomettryBetter than evaporation for maintaining stoichiometry of compounds
| [[Plasma enhanced chemical vapor Parylene deposition| Plasma Enhanced CVD (PECVD)Parylene Deposition]]| Mainly DielectricsParylene| 5-200Å25{{ndash}}50{{nbsp}}Å/sec| 200-400ºC20ºC| Some sidewall coverageGood| Good| Very Low| Good| 10-100nmunknown| Lower temp oxide/nitride depositionThick (0.8{{ndash}}75{{nbsp}}μm) encapsulation and insulation; Biocompatible
| [[Low pressure Plasma enhanced chemical vapor deposition|Plasma Enhanced]] [[Plasma enhanced chemical vapor deposition| Low Pressure CVD (LPCVDPECVD)]]| Mainly Dielectrics| 10-100 5{{ndash}}200{{nbsp}}Å/sec| 600-1200ºC200{{ndash}}400ºC| Isotropic - good sidewall coverageOK| Very Good| Very Low| Very Good| 1-10nm10{{ndash}}100{{nbsp}}nm| Better quality Lower temp oxide/nitride dep where substrate can handle higher tempdeposition
| [[ElectroplatingLow pressure chemical vapor deposition|ECD/PlatingLow Pressure CVD (LPCVD)]]| Conductive MaterialsMainly Dielectrics| Depends on process10{{ndash}}100{{nbsp}}Å/sec| 0-100ºC600{{ndash}}1200ºC| Isotropic - good sidewall coverageVery Good| Very Good| Depends on processVery Low| Depends on processVery Good| Depends on Process1{{ndash}}10{{nbsp}}nm| Thicker films deposition with good conformalityBetter quality oxide/nitride dep where substrate can handle higher temp
|[[Thermal oxidation]]|Oxide on Silicon|0.1{{ndash}}100{{nbsp}}Å/sec|900{{ndash}}1200ºC|Very Good|Very Good|Very Low|Very Good|1{{ndash}}10{{nbsp}}nm|Best quality oxide when substrate can handle higher temp and slower deposition rate|-|[[Electroplating|ECD/Plating]]|Conductive Materials|Depends on process|0{{ndash}}100ºC|Very Good|Good|Depends on process|Depends on process|Depends on Process|Thicker films deposition with good conformality|-| [[Atomic layer deposition|Atomic Layer Deposition (ALD)]]| Metals, metal oxides and nitrides| ~1Å0.1{{ndash}}3{{nbsp}}Å/ cycle. 5-{{ndash}}200 {{nbsp}}sec cycle| 50-{{ndash}}300ºC| Isotropic - very good sidewall coverageVery Good| Good| Low| Very good| 10-100nm{{ndash}}100{{nbsp}}nm| Very thin, very conformal films such as gate dieletrics, barriers, encapsualtionencapsulation
===Atomic layer deposition (ALD)===
{{main|Atomic layer deposition}}
[[Atomic layer deposition|Atomic Layer Deposition (ALD)]] is a technique which allows the deposition of ultra-thin films, a few nanometers thick, highly conformal and self limiting to be deposited in a precisely controlled way. These characteristics offer many benefits in semiconductor engineering, MEMS, catalysis and other nanotechnology applications. In ALD the precursor gas or gases are introduced, one at time, into the reactor and made react with the surface until all reactive sites are occupied and the reaction stops. The precursor gases are pulsed, alternatively, never present simultaneously in the chamber. These type of deposition is slow and requires highly pure substrates to obtained the desired films.
===Chemical vapor deposition (CVD)===
{{main|Chemical vapor deposition}}
{{missing information|Parylene deposition}}In [[Chemical chemical vapor deposition]] (CVD) consists of the , a substrate being is typically heated and exposed to one or more volatile gaseous precursors, which decompose and react and/or decompose on the substrate surface to produce the desired thin-film material. CVD can be used to grow high quality and uniform thin films of various materials (mostly insulating or semiconducting).  CVD can be subdivided into classifications based on pressure requirements (atmospheric (APCVD), low-pressure (LPCVD), and ultra-high vacuum (UHCVD)). LPCVD is used in the LNF to deposit silicon dioxide, silicon nitride, and doped and undoped polysilicon. It can also be classified based on the mechanism used to decompose the source gas: plasma-enhanced CVD (PECVD) breaks apart gas molecules by application of ionizing voltage, whereas LPCVD and APCVD use elevated temperatures to cause the source gas to decompose. PECVD is used in the LNF to depositsilicon dioxide, silicon nitride, and amorphous silicon (a-Si:H). There are many methods Catalytic CVD refers to CVD where the surface reaction is facilitated by the presence of a catalyst material on the substrate, or where the substrate itself is a catalyst for enhancing the chemical growth reaction rates . [[Carbon nanotubes and graphene]] can be grown by catalytic CVD. Another type of CVD is metalorganic CVD, which uses organometallic gas precursors to grow III-V and II-VI compound semiconductors such as InP, GaN, AlGaAs, etc. Other example of CVD is the precursorsdeposition of Parylene, in this case the solid Parylene dimer is evaporated and separated into the monomer by heat and deposited in uniform, pin hole free thin films. <!--The LNF has fourteen [[Low pressure chemical vapor deposition| Low Pressure CVD (LPCVD)]] furnace tubes for growing doped and undoped polysilicon, silicon dioxide, and silicon nitride. It has five [[Plasma enhanced chemical vapor deposition| Plasma Enhanced CVD (PECVD)]] chambers.-->
Electroplating (electrodeposition, electrochemical deposition(ECD), plating) is the technique recommended when metal layers of more than a micron of thickness are needed. It is only available on conductive substrates and for conductive films. It is also the technique of choice when there is no line of sight with the surface to be deposited, for example , the filling of vias in the semiconductor processing. The principle is simple: positive ions are attracted to the negative electrode (anode which is the sample in the case of metal deposition) , and negative ions travel towards the cathode or positive electrode. ECD is an electrochemical cell, which consists of a cathode, anode, and electrolyte that contains the ion to be deposited. Electrodeposition does not require a vacuum environment, thus making it relatively inexpensive and it can be done in batch or continue processes, thus making it relatively inexpensive. It creates a thick, durable film which whose surface finish can be tailored depending on the requirements.
===Physical vapor deposition (PVD)===
{{main|Physical vapor deposition}}
[[PVD|Physical vapor deposition (PVD)]] describes Physical vapor deposition (PVD) is a variety type of vacuum deposition methods used to deposit thin films by the condensation of where source materials are transformed into a vapor or plasma using a physical process (typically heating or bombardment.) The vapor then moves towards a substrate, usually in a vaporized form of vacuum or inert gas environment, where it condenses on the desired film material onto various substratessubstrate surface.
===GrowthThermal Oxidation==={{expand sectionmain|Thermal oxidation}}*[[Thermal oxidation]]*Carbon nanotube growthis used to grow very high-quality silicon dioxide on silicon. By exposing silicon to oxygen at very high temperatures (~1000 C), the silicon and oxygen react and form silicon dioxide. Thermal oxidation is typically used to grow silicon dioxide for MOS transistor gates.
==Figures of merit==
===Deposition rate===
Deposition The deposition rate, usually expressed in Å/sec, is measured at the substrate using various methods depending on the type of film deposited. It is in measured real-time in the evaporators and after run completion for other techniques.===Film Composition===Also known as stoichiometry and usually expressed in units of atomic % or weight %. The film composition affects film behavior, optical constants, stress, etch rates, and other physical properties like melting point, vapor pressure, etc.
===Refractive index===
Defines It defines the optical properties of a given material for a specific frequency or wavelength of light. Also known as the index of refraction , or n. The refractive index of the a film is can be measured using [[Ellipsometry]] that and also gives clues as to the density, dielectric constant, and stoichiometry of the film <ref name="handbook">Handbook of Thin Film Deposition: Processes and Technologies</ref>.
===Conformality or Step Coverage===
Step coverage is the measure of how much coating is on the bottom/sidewall of a feature vs . how much coating is on the top/field areas. It is highly dependent on the geometry of the features and the type of deposition chosen. ALD, TEOS, HTO, and Thermal thermal oxide are very conformal. LTO, PECVD, Sputteringsputtering, and Evaporation evaporation are much less conformal.
===Film Stress===
The It is the elastic mismatch between the thin film deposited and the substrate that results in a change in substrate curvature. Residual stress is typically defined by a unit of measurement (MPa) across a given area.
===Thermal budget===
{{expand section}}It is defined as the amount of thermal energy that is transferred to the substrate. The thermal budget is determined by temperature, time-at-temperature and heat transfer to the substrate. Higher-temperature (and higher-kinetic-energy) methods of deposition tend to have better step coverage/conformality, lower defects, better optical properties and may have lower stress. However, lower temperatures methods may be needed to account for temperature limitations of the substrate, previously deposited layers and patterning/sacrificial layers.
==Further reading==
 *[ LNF Tech Talk for Deposition is Coming Soon!]* Other stuff, e.g. technology workshop slides* External links (can be in another section below, if appropriate)
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[[Category:Deposition| ]]
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