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| Better quality oxide/nitride dep where substrate can handle higher temp
|-
| <big>'''Growth????? - INCLUDE IN LPCVD?'''</big>[[Thermal oxidation]]| Mainly DielectricsOxide on Silicon
| 0.1-100 Å/sec
| 600900-1200ºC
| Isotropic - very good sidewall coverage
| Very Good
