Administrator, Executive, FinancialAdmin, LabUser, OnlineAccess, PhysicalAccess, RemoteUser, Staff, StoreManager, StoreUser
2,196
edits
Changes
Jump to navigation
Jump to search
===Atomic layer deposition (ALD)==={{main|Atomic layer deposition}}[[Atomic layer deposition|Atomic Layer Deposition (ALD)]] is a technique which allows the deposition of ultra-thin films, a few nanometers thick, highly conformal and self limiting to be deposited in a precisely controlled way. These characteristics offer many benefits in semiconductor engineering, MEMS, catalysis and other nanotechnology applications. In ALD the precursor gas or gases are introduced, one at time, into the reactor and made react with the surface until all reactive sites are occupied and the reaction stops. The precursor gases are pulsed, alternatively, never present simultaneously in the chamber. These type of deposition is slow and requires highly pure substrates to obtained the desired films.
|}
===Chemical vapor deposition (CVD)===
{{missing information|Parylene deposition}}
[[Chemical vapor deposition]] (CVD) consists of the substrate being exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. There are many methods for enhancing the chemical reaction rates of the precursors. The LNF has fourteen [[Low pressure chemical vapor deposition| Low Pressure CVD (LPCVD)]] furnace tubes and five [[Plasma enhanced chemical vapor deposition| Plasma Enhanced CVD (PECVD)]] chambers.
===Atomic layer deposition (ALD)===
{{main|Atomic layer deposition}}
[[Atomic layer deposition|Atomic Layer Deposition (ALD)]] is a technique which allows the deposition of ultra-thin films, a few nanometers thick, highly conformal and self limiting to be deposited in a precisely controlled way. These characteristics offer many benefits in semiconductor engineering, MEMS, catalysis and other nanotechnology applications. In ALD the precursor gas or gases are introduced, one at time, into the reactor and made react with the surface until all reactive sites are occupied and the reaction stops. The precursor gases are pulsed, alternatively, never present simultaneously in the chamber. These type of deposition is slow and requires highly pure substrates to obtained the desired films.
=== Low Pressure Chemical Vapor Deposition (LPCVD)
=== Parylene deposition===
===Electroplating===
