Changes

In [[chemical vapor deposition]] (CVD) a substrate is typically heated and exposed to one or more gaseous precursors, which react and/or decompose on the substrate surface to produce the desired thin film material. CVD can be used to grow high quality, uniform thin films of various materials. CVD can be subdivided into classifications based on pressure requirements (atmospheric (APCVD), low-pressure (LPCVD), and ultra-high vacuum (UHCVD)). It can also be classified based on the mechanism used to decompose the source gas: plasma-enhanced CVD (PECVD) breaks apart gas molecules by application of ionizing voltage; LPCVD and APCVD use elevated temperatures to cause the source gas to decompose.  The LNF has fourteen [[Low pressure chemical vapor deposition| Low Pressure CVD (LPCVD)]] furnace tubes for growing doped and undoped polysilicon, silicon dioxide, and silicon nitride. and five [[Plasma enhanced chemical vapor deposition| Plasma Enhanced CVD (PECVD)]] chambers.