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[[Plasma generation#Capacitive coupling|Capacitively]] coupled PECVD systems have one primary RF power supply, used to generate the plasma, but may have additional power supplies which allow further modification of the film properties.
; Primary RF Power
* Typically high frequency (HF) RF power at 13.56 MHz frequency
* Used to disassociate ("crack") the reactant gases and generate the plasma
* Strong effect on film stress
; Secondary (bias) RF power
* Typically a low frequency (LF) RF power at less than 500 kHz frequency
* Causes more ion bombardment of the sample surface
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