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Deposition

180 bytes removed, 6 years ago
! style="font-weight: bold;" | Deposition Rate
! style="font-weight: bold;" | Substrate Temperature
! style="font-weight: bold;" | Conformality/Sidewall Coverage
! style="font-weight: bold;" | Film Density
! style="font-weight: bold;" | Impurity Levels
| 1-15 Å/sec
| 10-100ºC
| Highly directional Poor- no sidewall coverageNone
| Poor
| Low
| 0.1-10 Å/sec
| 50-300ºC
| Some sidewall coverageOK
| Good
| Low
| Good
| ~10nm5-20nm
| More conformal metal and dielectric thin film deposition. Better than evaporation for maintaining stoichiometry of compounds
|-
| [[Parylene deposition| CVD Parylene Deposition]]
| Parylene
| ~3025-50Å/sec
| 20ºC
| Good Sidewall coverage
| Good
| Very Low
| 5-200Å/sec
| 200-400ºC
| Some sidewall coverageOK
| Good
| Very Low
| 10-100 Å/sec
| 600-1200ºC
| Isotropic - good sidewall coverageVery Good
| Very Good
| Very Low
| 0.1-100 Å/sec
| 900-1200ºC
| Isotropic - very good sidewall coverageVery Good
| Very Good
| Very Low
| Depends on process
| 0-100ºC
| Isotropic - good sidewall coverageVery Good
| Good
| Depends on process
| [[Atomic layer deposition|Atomic Layer Deposition (ALD)]]
| Metals, metal oxides and nitrides
| ~1Å0.1-3 Å/ cycle.
5-200 sec cycle
| 50-300ºC
| Isotropic - very good sidewall coverageVery Good
| Good
| Low
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