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Deposition

304 bytes added, 6 years ago
| [[Evaporation]]
| Metals and Dielectrics
| 1-{{ndash}}15 {{nbsp}}Å/sec| 10-{{ndash}}100ºC| Poor-{{ndash}}None
| Poor
| Low
| Poor
| 10-100nm{{ndash}}100{{nbsp}}nm
| Works well with liftoff patterning
|-
| [[Sputter deposition]]
| Metals and dielectrics
| 0.1-{{ndash}}10 {{nbsp}}Å/sec| 50-{{ndash}}300ºC
| OK
| Good
| Low
| Good
| 5-20nm{{ndash}}20{{nbsp}}nm
| More conformal metal and dielectric thin film deposition. Better than evaporation for maintaining stoichiometry of compounds
|-
| [[Parylene deposition| CVD Parylene Deposition]]
| Parylene
| 25-50Å{{ndash}}50{{nbsp}}Å/sec
| 20ºC
| Good
| Good
| unknown
| Thick (0.8-75μm{{ndash}}75{{nbsp}}μm) encapsulation and insulation; Biocompatible
|-
| [[Plasma enhanced chemical vapor deposition| Plasma Enhanced CVD (PECVD)]]
| Mainly Dielectrics
| 5-{{ndash}}200 {{nbsp}}Å/sec| 200-{{ndash}}400ºC
| OK
| Good
| Very Low
| Good
| 10-100nm{{ndash}}100{{nbsp}}nm
| Lower temp oxide/nitride deposition
|-
| [[Low pressure chemical vapor deposition| Low Pressure CVD (LPCVD)]]
| Mainly Dielectrics
| 10-{{ndash}}100 {{nbsp}}Å/sec| 600-{{ndash}}1200ºC
| Very Good
| Very Good
| Very Low
| Very Good
| 1-10nm{{ndash}}10{{nbsp}}nm
| Better quality oxide/nitride dep where substrate can handle higher temp
|-
| [[Thermal oxidation]]
| Oxide on Silicon
| 0.1-{{ndash}}100 {{nbsp}}Å/sec| 900-{{ndash}}1200ºC
| Very Good
| Very Good
| Very Low
| Very Good
| 1-10nm{{ndash}}10{{nbsp}}nm| Best quality oxide when substrate can handle higher temp and slower dep deposition rate
|-
| [[Electroplating|ECD/Plating]]
| Conductive Materials
| Depends on process
| 0-{{ndash}}100ºC
| Very Good
| Good
| [[Atomic layer deposition|Atomic Layer Deposition (ALD)]]
| Metals, metal oxides and nitrides
| 0.1-{{ndash}}3 {{nbsp}}Å/cycle. 5-{{ndash}}200 {{nbsp}}sec cycle| 50-{{ndash}}300ºC
| Very Good
| Good
| Low
| Very good
| 10-100nm{{ndash}}100{{nbsp}}nm
| Very thin, very conformal films such as gate dieletrics, barriers, encapsulation
|}
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