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===Etch/Dep Rate===
Etch rate is feature size dependent - smaller features will etch slower than larger ones. Bulk etch rate is approximately 2600 2500 Å/min. The etch exhibits minimal [[loading]] effect.
===Uniformity===
===Mask Selectivity===
The etch rate of [[SPR 220]] is approximately 100 140 nm/min, giving a selectivity of ~21.58:1. Selectivity will be lower on smaller features, due to the decrease in oxide etch rate.
==Limitations==
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