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STS APS DGRIE/Processes/uk submicron etch

296 bytes added, 4 years ago
===Mask Selectivity===
The etch rate of [[SPR 220]] is approximately 140 nm1600 A/min, giving a (selectivity of 1.85:1). Selectivity will be lower on smaller features, due to the decrease in oxide etch rate. This is the etch rate on a 6" wafer. Selectivity may be lower on samples/wafers mounted to a carrier due to increased sample heating. The etch rate of [[PMMA]] is approximately 1800 A/min (selectivity ~1.3:1). The etch rate of stoichiometric [[silicon nitride]] (Si3N4) is 1750 A/min (selectivity 1.4:1).
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