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Plasmatherm 790/Processes/L nit350

343 bytes removed, 1 year ago
|authors =
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==Capabilities==
{| class="wikitable" border="1" style="text-align: center"
|-
! Parameter
!
|-
| Deposition Rate
| 27.9 nm/min
|-
| Index of Refraction
| 1.999
|-
| Stress
| 10 MPa
|-
|}
 
Qualification is done with a 5 minute run, max allowed thickness of 2µm.
==Parameters==
|-
|}
 
==Capabilities==
{| class="wikitable" border="1" style="text-align: center"
|-
! Parameter
!
|-
| Deposition Rate
| 4.3 Å/sec
|-
| Index of Refraction
| 2.00 ± 0.02
|-
| Stress
| 50 ± 50 MPa
|-
|}
 
Qualification is done with a 5 minute run, max allowed thickness of 2µm. This recipe has also show to work as a KOH mask.
 
==Qualification==
<!-- Insert a description of how the process is qualified, generally this should include a chart to show the processes stability over time-->
Occasionally L_nit350 is tested on a 100 mm Si wafer. The results can be seen below.
 
{{expand section|need the chart}}
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