Changes

Jump to navigation Jump to search

Endeavor M1 AlN Sputter Tool

252 bytes removed, 3 years ago
no edit summary
[[Sputter_deposition|< Sputter deposition]]
{{#vardefine:toolid|6106161062}} {{#vardefine:technology|PVD}} {{#vardefine:restriction|3}}
{{infobox equipment
|caption =
*Aluminum Nitride ([[Aluminum Nitride|AlN]]) deposition.
**AlN is a 3-step process:
***A condition recipe which pastes a dummy 6" wafer with Al and then preps it for AlN deposition. The dummy wafer is then unloaded in the chamber***An etch recipe which runs an RF Ar etch on the process wafer and then runs an Ar/N<sub>2</sub> flow to prep the surface.
***Deposition recipes are designated by thickness and the the deposition time is set by a target file which is a mapping of dep rate per KWhr
****Users are only allowed must work with staff to change certain steps of the deposition recipes. Changes to condition or etch recipes are not allowed without staff supervision. ****Users can gas flows and stress unit settings to adjust thickness, uniformity and stress of the AlN film.
Recipe layout, recipe steps and editing rules are outlined in the DOP
==Maintenance==
Target is changed at 900 KWHrs. Kits swapped out around 500 KWHrs.
LabUser, OnlineAccess, PhysicalAccess, Staff, StoreManager, StoreUser
904

edits

Navigation menu