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Endeavor M1 AlN Sputter Tool

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[[Sputter_deposition|< Sputter deposition]]
{{#vardefine:toolid|61062}} {{#vardefine:technology|PVD}} {{#vardefine:restriction|3}}
{{infobox equipment
|overview = [[Endeavor M1 AlN Sputter ToolSystem Overview]]
|dop = [https://docs.google.com/document/d/1DiNtqJ7SK1-2OwEYjwgVWFtyG5mRrl5-2-I18CuyQv0/edit?usp=sharing/preview SOP]
|processes = [[Endeavor M1 AlN Sputter Tool/Processes|Supported Processes]]
|maintenance = [[Endeavor M1 AlN Sputter Tool#Maintenance | Maintenance]]
}}
The Endeavor M1 is dedicated for sputter-deposition of high quality piezoelectric [[Aluminum nitride|aluminum nitride Aluminum Nitride (AIN)]] films. Piezoelectric AlN is deposited using [[Reactive sputtering|reactive sputtering]] of a pure [[Aluminum|Al]] target with a combination of nitrogen and argon as the sputtering gasses. Piezoelectric AlN is difficult to sputter because of the insulating nature of the film, stress issues in the film and it’s sensitivity to O<sub>2</sub>. As a result, it requires a dedicated system which uses dual AC target technology, extensive Al pasting routines, substrate bias to prep surfaces and a loadlock to minimize pumping times while still allowing mid-10<sup>-7</sup> Torr pressures.
==Announcements==
*New Endeavor Tool being installed - Target Release April 22.
==Capabilities==
<!--A more general description of what the tool is capable of doing.-->
*Piezoelectric AlN films 0.5-2.5 µm thick
**Deposition rates of up to 9 Å/sec**Variable gas flows and adjustable substrate resistance/capacitance to allow for stress control
==System Overview==
===Hardware Details===
*Turbo-pumped/Water-pumped (high temp cryo that acts as a water trap,) loadlocked sputtering tool. Base pressures in the 10-7, 10-8 range
*10 KW AC power supply that runs 5-7KW power across a dual Al target source
*RF bias on wafer holding platen to control surface characteristics.thru Ar and N2 bombardment*Backside lamp heating*100 50 sccm N<sub>2</sub> and 20sccm Ar and 20sccm O2 flow meters.
*Handler for 6" wafers, carrier for 4" wafers.
===Substrate Requirements===
*'''4” and 6" wafers only'''
*The process heats the wafer considerably (~500°C or more) with heavy ion bombardment so no organics or low temperature films are allowed in the tool.
*The process only produces piezoelectric AlN films on certain materials (specifically blanket undoped or low-doped Si, SiO<sub>2</sub> and patterned Mo, Pt, Al.)
==Supported Processes==
<!-- We recommend creating a subpage detailing the supported processes for the tool, which will be generated if you leave the link below. Alternatively, you may include the information on this page. In that case, the Supported Processes document from the equipment manual can be included here, using {{#widget:GoogleDoc|key=googledocid}} -->
The Endeavor
 
*Aluminum Nitride ([[Aluminum Nitride|AlN]]) deposition.
**AlN is a 3-step process:
===Process Characterization===
====AlN Thickness ====
*AlN thickness is set in the recipe and the tool uses the target file data to determine the deposition rate.
**The deposition rate varies between 8.5-10.5 A/sec depending conditions.
**The Target file adjusts the deposition rate depending on the wear/age (KWhrs) of the target.
**Thickness data collected by users and staff in the logbook will be used to adjust and improve the accuracy of the target file.
{{#widget:Iframe|url<gallery mode=https://docs.google.com/spreadsheets/d/1mvHCzGf9yK63wkHunPnFwjE8wSg9qRw7"packed-eqvts60kF0/pubchart?oidhover" heights=1028091198&format=interactive"400px">|width=1200File:Endeavor_M1_Thickness_Response.jpeg|height=400|border=0}}</gallery>
====Stress Adjustment Unit====*The stress adjustment unit is used to adjust change the resistance in a capacitance/resistance path circuit to ground of the chamber.
**Users can adjust the dial before their runs.
**Typically adjustments below 25 will lead to plasma instability issues so the vendor does not recommend going below that point.
**The response for 1um films is below. Thicker films (1.5-2.5um) usually have less compressive stress. Thinner films will have more compressive stress.
{{#widget:Iframe|url<gallery mode=https://docs.google.com/spreadsheets/d/1mvHCzGf9yK63wkHunPnFwjE8wSg9qRw7"packed-eqvts60kF0/pubchart?oid=1028091198&formathover" heights=interactive|width=1200|height=400|border=0}}"450px">File:Endeavor_M1_SAU_Response.jpeg</gallery>
====AlN Hysteresis:====
*Hysteresis is mapped to look at the N<sub>2</sub>/Ar ratios that produce a poisoned AlN state
**Users will want to run in the lower target voltage regime (AlN poisoned mode.)
==Checkout Procedure==
<!-- Describe the checkout procedure for the tool. For example: -->
*Read through this page and the Standard Operating Procedure above.
*Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Helpdesk Ticket] requesting training.
*A tool engineer will schedule a time for initial training.
==Maintenance==
There is no maintenance allowed by users of this tool.
===Power Bump Recovery===
The only maintenance that users are allowed *In case of a power bump, nothing on the tool is time-critical or will lead to perform is power interruption recoverytool damage. *Follow The tool power up requires multiple steps and some system checks in the service aisle.Therefore, for power bump part of the [https://docsrecovery, please contact staff and do not attempt to unload any wafers.google.com/document/d/1r6gMJ77YZu0C75i8ZLnxSTcw9DgRo8nZcWkcLZwYRXg/preview AMS 2003 AlN Startup and Shutdown Procedure]
LabUser, OnlineAccess, PhysicalAccess, Staff, StoreManager, StoreUser
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