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GSI PECVD

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{{#vardefine:toolid|21040}}{{#vardefine:technology|PECVD}}{{#vardefine:restriction|2}}{{infobox equipment
|caption = GSI ULTRADEP 2000 PECVD System
|materials = [[Silicon dioxide|SiO<sub>2</sub>]], [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]], [[Silicon oxynitride|SiO<sub>x</sub>N<sub>y</sub>]]
==Capabilities==
<!--A more general description of what the tool is capable of doing.-->
 * Standard recipes Oxide 200 and Oxide 350 are optimized for average refractive index of 1.46 +/-0.006. * Standard recipes Nitr 200 Conv and Nitr 350 Conv are optimized for average refractive index of 2.00 +/-0.006.* Standard recipe Oxynitride 200 LS is optimized for low stress (<60 MPa for >1 um Films) * Standard recipe Oxide 200 THIN and Oxide 350 THIN are optimized for minimum porosity of films 1500-5000 angstroms
==System Overview==
===Hardware Details===
 * Gases
**Standard Gasbox Mounted MFC's
***[[Silane|SI<sub>H<sub>4</sub>]] - 300 sccm
***[[Helium|He<sub>]] - 500 sccm
***[[Nitrogen|N<sub>2</sub>]] - 1000 sccm
* Pressure
**Process chamber utilizes Ebara A70W dry pump, butterfly valve, and 10 T Baratron.
**Load-lock utilizes Alcatel ACP 28G dry pump.
**Deposition processes operate between 1.5T to 4.5T * Chuck**Heater block 100°C - 350°C(actual temperature is ~15% higher than setpoint)* RF
**Comdel dual frequency generator-
*** RF1: 1000 W, 13.56 MHz*** RF2: 200 W, 420 kHz
**Advanced Energy Navigator 13.56MHz auto-matching network utilizes variable vacuum capacitors via stepper motors with built-in VI probe at output.
**420 kHz impedance matching is accomplished via stand alone fixed match with the center impedance designed for the conjugate load impedance of the standard Nitride processes.
===Substrate Requirements===
 * 100 mm (4") wafers and pieces * Substrate material:
**Silicon
**Quartz
**Glass
**GaAs
* Aluminum carrier is used for all runs. * Maximum substrate thickness allowed is <800um (thickness + bow).
===Material Restrictions===
==Checkout Procedure==
<!-- Describe the checkout procedure for the tool. For example: -->
 # Read through the [https://docs.google.com/a/lnf.umich.edu/document/d/1qM6qBXAB2DwTyadCRzu_RAS3F1iJkE_y4rrzLL91Rv8/preview System Overview] and the [https://docs.google.com/a/lnf.umich.edu/document/d/1jb4QuGsk1VxW6XAbIobkSpKL8GQ1w4IeZdi5vFHkTRc/preview SOP].# Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Helpdesk Ticket] requesting training. Please include information on your desired deposition process (films, thicknesses) and a description of your sample (substrate size, substrate material, and materials already present on your sample). Please verify that your substrate material and materials already present on your sample are listed as approved materials in the System Overview.# A tool engineer will contact you to arrange a time for initial training.# One or more of these training sessions will be required before a checkout session can be arranged to gain authorization on the tool.# Request a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.
==Maintenance==
<!-- Describe standard maintenance/qualification tests here -->
 *Chamber maintenance is performed after every 30 50 um's of deposition.
*Following chamber maintenance, a monitor wafer is run on one of the LNF supported standard processes (typically Oxide 200 1500 angstroms) to check tool performance and film characteristics.
 
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===Process Name===
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