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Endeavor M1 AlN Sputter Tool

6 bytes added, 2 years ago
===Substrate Requirements===
*'''4” and 6" wafers only'''
*The process heats the wafer considerably (~500°C or more) with heavy ion bombardment so no organics or low temperature films are allowed in the tool.
*The process only produces piezoelectric AlN films on certain materials (specifically blanket undoped or low-doped Si, SiO<sub>2</sub> and patterned Mo, Pt, Al.)
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