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==System Overview==
The PVD 75 has a 14" square-shaped chamber high vacuum process chamber. The tools four Tourus Mag Kepper magnetron sputtering sources are set up to allow for RF, DC, Pulse DC and DC co-sputtering. There is an additional Rf power supply on the substrate platen to allow for in situ sample cleans, and bias voltage to manipulate the film characteristics. Sample heating up to 350°C is achieved by using the tools quartz heater lamps. The average run time on this tool per wafer is about two hours.
===Hardware Details===
*Cryo pumped chamber – lower 10<sup>-6</sup> Torr base pressure
*Chamber capacity: single wafer
*Configured with port for future load lock
*Sample heating – up to 350°C
**Four 3” Sputtering Guns
**2 DC (one pulse DC source) and 2 RF power supply (one for sample RF bias)
===Substrate Requirements===
*Sample sizes: pieces, up to 6” wafers.
*Wafer holders available for 2", 3", 4", 6"; as well as clip fixtures for smaller pieces
**Diameter 150 mm maximum
**Substrates up to 4 mm Thick. With special fixture up to 8 mm.
**[https://docs.google.com/document/d/1p8k5awL8j_HvGESUDsE80uE2obIYRb_8AiQzlfoDT3Q/edit#|Sputter Sample Mounting]
===Material Restrictions===
{{material restrictions}}
no edit summary
*limited film stress versatility with in film development.
*Reactive film capabilities (Ar, O<sub>2</sub>, and N<sub>2</sub>)
==Supported Processes==
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==System Overview==
The PVD 75 has a 14" square-shaped chamber high vacuum process chamber. The tools four Tourus Mag Kepper magnetron sputtering sources are set up to allow for RF, DC, Pulse DC and DC co-sputtering. There is an additional Rf power supply on the substrate platen to allow for in situ sample cleans, and bias voltage to manipulate the film characteristics. Sample heating up to 350°C is achieved by using the tools quartz heater lamps. The average run time on this tool per wafer is about two hours.
===Hardware Details===
*Cryo pumped chamber – lower 10<sup>-6</sup> Torr base pressure
*Chamber capacity: single wafer
*Configured with port for future load lock
*Sample heating – up to 350°C
**Four 3” Sputtering Guns
**2 DC (one pulse DC source) and 2 RF power supply (one for sample RF bias)
===Substrate Requirements===
*Sample sizes: pieces, up to 6” wafers.
*Wafer holders available for 2", 3", 4", 6"; as well as clip fixtures for smaller pieces
**Diameter 150 mm maximum
**Substrates up to 4 mm Thick. With special fixture up to 8 mm.
**[https://docs.google.com/document/d/1p8k5awL8j_HvGESUDsE80uE2obIYRb_8AiQzlfoDT3Q/edit#|Sputter Sample Mounting]
===Material Restrictions===
{{material restrictions}}
==Standard Operating Procedure==
