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Plasma etching

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Plasma etching is a form of [[plasma processing]] designed to [[etching|remove]] material from a sample using plasma discharges. It is highly controllable and can be used to etch a wide variety of materials. The most commonly used form of plasma etching is referred to in the microfabrication world as [[reactive ion etching]] (RIE). However, there are other types of plasma etching, including [[plasma ashing]] and [[ion milling]]. For a detailed overview of plasma etching in the LNF, please review the [https://docs.google.com/a/lnf.umich.edu/file/d/0B76AgohVTgqdamFiaE1mRk9mVmM/preview technology workshop]
 
==Reactive ion etching==
{{main|Reactive ion etching}}
 
Reactive ion etching (RIE) is one of the most common forms of [[plasma etching]]. It typically uses a combination of chemically reactive elements and energetic ions to etch the desired material. One major advantage to RIE over other forms of etching is that the process can be designed to be highly [[Isotropy|anisotropic]], allowing for much finer resolution and higher aspect ratios.
 
{{:Reactive ion etching}}
 
==Plasma ashing==
{{main|Plasma ashing}}
 
Plasma ashing typically refers to the removal of organics, particularly [[photoresist]] from a sample using a plasma discharge. These processes typically use [[oxygen]] as the main etch gas and sometimes require a high temperature to enhance the reactivity.
 
===YES-CV200RFS(E)===
The [[YES-CV200RFS(E)|YES-CV200RFS(E) (YES Plasma Stripper)]] is the primary plasma ashing equipment in the main cleanroom of the LNF. Its primary uses are low-temperature [[plasma descum]] and high-temperature [[photoresist stripping|stripping]] of [[photoresist]] but can also be used to etch a wide variety of polymers as well as for [[sample cleaning]] and [[surface activation]].
 
==Ion milling==
{{main|Ion milling}}
 
Ion milling uses an ion beam (typically [[argon]]) to [[sputtering|sputter]] material from the surface of the sample. It has very low selectivity (typically 1:1) but can be used on any material, even [[inert metal]]s. The LNF currently does not have any ion milling capabilities.
==Method of operation==
Some plasma etching systems allow for the temperature of the sample to be controlled. For most processes, the sample is kept between 20-50°C and are actively cooled to prevent damage to the mask, which is often [[photoresist]]. A liquid nitrogen cooled chuck, such as on the [[Oxford ICP RIE]] can be used to perform [[cryogenic etching]]. Also, some etch processes (e.g. [[polymer]] etching) benefit from a heated chuck (can be up to 200°C).
==Reactive ion etching=={{main|Reactive ion etching}} Reactive ion etching (RIE) is one of the most common forms of [[plasma etching]]. It typically uses a combination of chemically reactive elements and energetic ions to etch the desired material. One major advantage to RIE over other forms of etching is that the process can be designed to be highly [[Isotropy|anisotropic]], allowing for much finer resolution and higher aspect ratios. {{:Reactive ion etching}} ==Plasma ashing=={{main|Plasma ashing}} Plasma ashing typically refers to the removal of organics, particularly [[photoresist]] from a sample using a plasma discharge. These processes typically use [[oxygen]] as the main etch gas and sometimes require a high temperature to enhance the reactivity. ===YES-CV200RFS(E)===The [[YES-CV200RFS(E)|YES-CV200RFS(E) (YES Plasma Stripper)]] is the primary plasma ashing equipment in the main cleanroom of the LNF. Its primary uses are low-temperature [[plasma descum]] and high-temperature [[photoresist stripping|stripping]] of [[photoresist]] but can also be used to etch a wide variety of polymers as well as for [[sample cleaning]] and [[surface activation]]. ==Ion milling=={{main|Ion milling}} Ion milling uses an ion beam (typically [[argon]]) to [[sputtering|sputter]] material from the surface of the sample. It has very low selectivity (typically 1:1) but can be used on any material, even [[inert metal]]s. The LNF currently does not have any ion milling capabilities. ==EquipmentComplete tool list==
For a complete list of plasma etching equipment available at the LNF, please see [[:Category:Plasma etching equipment|list of plasma etching equipment]] or the specific plasma etching category, above.
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