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Plasma etching

168 bytes added, 2 years ago
{{main|Ion milling}}
Ion milling uses an ion beam (typically [[argon]]) to [[sputtering|sputter]] material from the surface of the sample. It has very low selectivity (typically 1:1) but can be used on any material, even [[inert metal]]s.  ===Nanoquest II Ion Mill==={{main|Nanoquest II Ion Mill}}The LNF currently does not have any Nanoquest II Ion Mill is a 22 cm ion source for milling capabilitiesup to 150 mm wafers. It can etch most materials including metals, ceramics, semiconductors, dielectrics, etc.
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