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Plasma etching

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Plasma etching is a form of [[plasma processing]] designed to [[etching|remove]] material from a sample using plasma discharges. It is highly controllable and can be used to etch a wide variety of materials. The most commonly used form of plasma etching is referred to in the microfabrication world as [[reactive ion etching]] (RIE). However, there are other types of plasma etching, including [[plasma ashing]] and [[ion milling]]. For a detailed overview of plasma etching in the LNF, please review the [https://docsdrive.google.com/a/lnf.umich.edu/file/d/0B76AgohVTgqdamFiaE1mRk9mVmM/preview technology workshop?usp=sharing&resourcekey=0-yGk7A8kAmb0kQArcKPNlTQ Tech Talk{{TOC|limit=2|clear=left}}
==Reactive ion etching==
{{:Reactive ion etching}}
==Deep reactive ion etching==
{{main|Deep reactive ion etching}}
 
Deep reactive ion etching (DRIE) is a term used to describe RIE processes that are designed to achieve high (>10:1) aspect ratios or etch depths greater than several microns. One common process is the [[Wikipedia:Bosch process|Bosch process]].
{{:Deep reactive ion etching}}
==Plasma ashing==
{{main|Plasma ashing}}
==Further reading==
* [httpshttp://docslnf-wiki.google.com/a/lnfeecs.umich.edu/filewiki/d/0B76AgohVTgqdamFiaE1mRk9mVmM/preview User_Resources#LNF_Tech_Talks_.28technology_seminar_series.29 LNF Tech Talk for RIE Workshop January 16th, 2015]
[[Category:Plasma etching| ]]
[[Category:Plasma processing|Etching]]
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